ssm6n7002fu 2007-11-01 1 toshiba field effect transistor silicon n channel mos type ssm6n7002fu high speed switching applications analog switch applications ? small package ? low on resistance : r on = 3.3 (max) (@v gs = 4.5 v) : r on = 3.2 (max) (@v gs = 5 v) : r on = 3.0 (max) (@v gs = 10 v) absolute maximum ratings (ta = 25c) (q1, q2 common) characteristics symbol rating unit drain-source voltage v ds 60 v gate-source voltage v gss 20 v dc i d 200 drain current pulse i dp 800 ma drain power dissipation (ta = 25c) p d (note 1) 300 mw channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32mm 2 6) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm jedec D jeita D toshiba 2-2j1c nc 6 5 4 1 2 3 q1 q2 654 123 0.4 mm 0.8 mm 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1
ssm6n7002fu 2007-11-01 2 electrical characteristics (ta = 25c) (q1, q2 common) characteristics symbol test condition min typ max unit gate leakage current i gss v gs = 20 v, v ds = 0 ? ? 10 a drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 60 ? ? v drain cut-off current i dss v ds = 60 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 10 v, i d = 0.25 ma 1.0 ? 2.5 v forward transfer admittance ? y fs ? v ds = 10 v, i d = 200 ma 170 ? ? ms i d = 500 ma, v gs = 10 v ? 2.0 3.0 i d = 100 ma, v gs = 5 v ? 2.1 3.2 drain-source on resistance r ds (on) i d = 100 ma, v gs = 4.5 v ? 2.2 3.3 input capacitance c iss ? 17 ? pf reverse transfer capacitance c rss ? 1.4 ? pf output capacitance c oss v ds = 25 v, v gs = 0, f = 1 mhz ? 5.8 ? pf turn-on delay time td (on) ? 2.4 4.0 switching time turn-off delay time td (off) v dd = 30v, i d = 200 ma, v gs = 0 ~ 10v ? 26 40 ns switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d =250 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. v dd = 30 v duty < = 1% v in : t r , t f < 2 ns (z out = 50 ) common source ta = 25c in v dd out 50 r l (c) v out (b) v in (a) test circuit 10v 0 10 s td (on) 90% 10% 0 v 10 v 10% 90% td (off) t r t f v dd v ds ( on )
ssm6n7002fu 2007-11-01 3 id - vds 0 100 200 300 400 500 600 700 800 900 1000 0 0.5 1 1.5 2 drain-source voltage vds (v) drain current id (ma) common source ta=25c vgs=2.3v 2.5 2.7 3.0 3.3 4.04.5 5 10 7 id - vgs 0.01 0.1 1 10 100 1000 012345 gate-source voltage vgs (v) drain current id (ma) common source vds=10v ta=100c 25c -25c rds(on) - id 0 1 2 3 4 5 10 100 1000 drain current id (ma) common source ta=25c vgs=4.5v 5.0v 10v rds(on) - vgs 0 1 2 3 4 5 0246810 gate-source voltage vgs (v) common source id=100ma ta=100c 25c -25c rds(on) - ta 0 1 2 3 4 5 -25 0 25 50 75 100 125 150 ambient temperature ta (c) common source vgs=4.5v,id=100ma 5.0v,100ma 10v,500ma vth - ta 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -25 0 25 50 75 100 125 150 ambient temperature ta (c) gate threshold voltage vth(v) common source id=0.25ma vds=10v drain-source on resistance rds(on) ( ) drain-source on resistance rds(on) ( ) drain-source on resistance rds(on) ( )
ssm6n7002fu 2007-11-01 4 |yfs| - id 10 100 1000 10 100 1000 drain current id (ma) forward transfer admittance |yfs| (ms) common source vds=10v ta=25c idr - vds 0 100 200 300 400 500 600 700 800 900 1000 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 drain-source voltage vds (v) drain reverse current idr (ma) common source vgs=0v ta=25c s idr g d c - vds 1 10 100 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) common source vgs=0v f=1mhz ta=25c ciss coss crss t - id 1 10 100 1000 10000 1 10 100 1000 drain current id (ma) switching time t (ns) common source vdd=30v vgs=0~10v ta=25c td(off) tr td(on) tf pd* - ta 0 50 100 150 200 250 300 350 400 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) drain power dissipation pd* (mw) mounted on fr4 board 25.4mm25.4mm1.6t cu pad 0.32mm 2 6 * :total rating
ssm6n7002fu 2007-11-01 5 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? 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